Semiconductor device package with a stress relax pattern
摘要:
A semiconductor device package has a die, a pattern of dielectric material formed on an active surface of the die, a plurality of metal contacts electrically connected to the die and surrounded by the pattern, a mold compound formed around the pattern, the die and the metal contacts, and a redistribution layer formed on a grinded surface of the mold compound and electrically connected to the metal contacts. The dielectric material has a young's modulus lower than a young's modulus of the mold compound, and the dielectric material has a coefficient of thermal expansion lower than a coefficient of thermal expansion of the mold compound.
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