Invention Grant
- Patent Title: Semiconductor device including a transistor, a wiring and a barrier film
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Application No.: US15138539Application Date: 2016-04-26
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Publication No.: US10249766B2Publication Date: 2019-04-02
- Inventor: Tetsuhiro Tanaka
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2012-073827 20120328
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L23/532 ; H01L29/66 ; H01L27/12 ; H01L29/786
Abstract:
In a semiconductor device including a transistor, an oxygen release type oxide insulating film is formed in contact with a channel formation region of the transistor. The channel formation region is formed in an oxide semiconductor film. Oxygen is supplied from the oxide insulating film to the oxide semiconductor film. Further, an oxygen barrier film which penetrates the oxide insulating film is formed around the channel formation region, whereby a diffusion of oxygen to the wiring, the electrode, and the like connected to the transistor can be suppressed.
Public/Granted literature
- US20160240685A1 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE Public/Granted day:2016-08-18
Information query
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