- 专利标题： High quality AlSb for radiation detection
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申请号： US15424464申请日： 2017-02-03
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公开(公告)号： US10249780B1公开(公告)日： 2019-04-02
- 发明人: Ganesh Balakrishnan , Adam Alexander Hecht , Erin Ivey Vaughan
- 申请人： STC.UNM
- 申请人地址： US NM Albuquerque
- 专利权人： STC.UNM
- 当前专利权人： STC.UNM
- 当前专利权人地址： US NM Albuquerque
- 代理机构： MH2 Technology Law Group, LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L31/08 ; H01L31/18 ; H01L31/0304 ; H01L31/0216 ; H01L31/0392
摘要：
Provided is a method of making a radiation detector, including: growing a thin film on a substrate. The substrate is a silicon substrate. The thin film includes aluminum antimony alloy (AlSb). The growing is epitaxial growth via ultra-high vacuum molecular beam epitaxy (UHV-MBE).
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