Invention Grant
- Patent Title: Metrology method, target and substrate
-
Application No.: US15274273Application Date: 2016-09-23
-
Publication No.: US10254658B2Publication Date: 2019-04-09
- Inventor: Daan Maurits Slotboom , Arie Jeffrey Den Boef , Martin Ebert
- Applicant: ASML Netherlands B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Priority: EP15187671 20150930
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
A method of measuring a parameter of a lithographic process, the method including: illuminating a diffraction measurement target on a substrate with radiation, the measurement target including at least a first sub-target, at least a second sub-target and at least third sub-target, wherein the first, second and third sub-targets each include a periodic structure and wherein the first sub-target, second sub-target and third sub-target each have a different design and wherein at least two of the sub-targets are respectively designed for determination of a different lithographic process parameter; and detecting radiation scattered by the at least two sub-targets to obtain for that target a measurement representing the different parameters of the lithographic process.
Public/Granted literature
- US20170090302A1 Metrology Method, Target and Substrate Public/Granted day:2017-03-30
Information query
IPC分类: