An integrated circuit (IC) structure is disclosed. The structure can include: a first heat dissipative element disposed between a pair of shallow trench isolations (STIs) in a substrate, and a first polysilicon resistor in a polysilicon layer positioned over the substrate and the pair of STIs, the first polysilicon resistor in thermal communication with the first heat dissipative element. The structure can also include a second polysilicon resistor in the polysilicon layer, the second polysilicon resistor laterally separated from the first polysilicon resistor, and the first heat dissipative element in thermal communication with the first polysilicon resistor and the second polysilicon element. The structure can also include a second heat dissipative element, the second heat dissipative element in a different directional orientation than the first heat dissipative element.