Invention Grant
- Patent Title: Semiconductor structure with a gap between conductor features and fabrication method thereof
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Application No.: US15886812Application Date: 2018-02-01
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Publication No.: US10256312B1Publication Date: 2019-04-09
- Inventor: Feng-Yi Chang , Fu-Che Lee , Chieh-Te Chen , Yi-Ching Chang
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: CN201810072080 20180125
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L21/768 ; H01L23/528 ; H01L29/66 ; H01L23/522 ; H01L23/532 ; H01L23/00 ; H01L23/31
Abstract:
A semiconductor structure includes a contact plug located on a barrier layer in a contact hole; a first conductive feature integrally formed with the contact plug on the barrier layer; a second conductive feature disposed on the interlayer dielectric layer; and a gap between the first and second conductive features. The gap includes a vertical trench recessed into the interlayer dielectric layer, and a discontinuity in the barrier layer. The discontinuity extends below the second conductive feature to form an undercut structure.
Information query
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