Invention Grant
- Patent Title: Structures for nitride vertical transistors
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Application No.: US15388963Application Date: 2016-12-22
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Publication No.: US10256352B2Publication Date: 2019-04-09
- Inventor: Min Sun , Tomas Apostol Palacios
- Applicant: Massachusetts Institute of Technology
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Wolf, Greenfield & Sacks, P.C.
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/812 ; H01L29/78 ; H01L29/808 ; H01L29/06 ; H01L29/20 ; H01L21/02 ; H01L29/66
Abstract:
A vertical semiconductor transistor and a method of forming the same. A vertical semiconductor transistor has at least one semiconductor region, a source, and at least one gate region. The at least one semiconductor region includes a III-nitride semiconductor material. The source is formed over the at least one semiconductor region. The at least one gate region is formed around at least a portion of the at least one semiconductor region.
Public/Granted literature
- US20170236951A1 STRUCTURES FOR NITRIDE VERTICAL TRANSISTORS Public/Granted day:2017-08-17
Information query
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