Invention Grant
- Patent Title: Fabricating a cap layer for a magnetic random access memory (MRAM) device
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Application No.: US15157834Application Date: 2016-05-18
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Publication No.: US10256399B2Publication Date: 2019-04-09
- Inventor: Guohan Hu , Kwangseok Kim , Younghyun Kim , Jung-Hyuk Lee , Jeong-Heon Park
- Applicant: International Business Machines Corporation , Samsung Electronics Co., Ltd.
- Applicant Address: US NY Armonk KR Gyeonggi-Do
- Assignee: International Business Machines Corporation,Samsung Electronics Co., Ltd.
- Current Assignee: International Business Machines Corporation,Samsung Electronics Co., Ltd.
- Current Assignee Address: US NY Armonk KR Gyeonggi-Do
- Agency: Ryan, Mason & Lewis, LLP
- Agent Vazken Alexanian
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L43/10
Abstract:
A method for manufacturing a semiconductor device includes forming a magnetic tunnel junction (MTJ) structure comprising a magnetic fixed layer, a non-magnetic barrier layer and a magnetic free layer, and forming a metal oxide cap layer on the MTJ structure, wherein forming the metal oxide cap layer comprises depositing a metal layer on the magnetic free layer, performing an oxidation of the deposited metal layer to form an oxidized metal layer, and depositing a metal oxide layer on the oxidized metal layer.
Public/Granted literature
- US20170338404A1 FABRICATING A CAP LAYER FOR A MAGNETIC RANDOM ACCESS MEMORY (MRAM) DEVICE Public/Granted day:2017-11-23
Information query
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