Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15173875Application Date: 2016-06-06
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Publication No.: US10256400B2Publication Date: 2019-04-09
- Inventor: Munehiro Tada , Toshitsugu Sakamoto , Hiromitsu Hada , Naoki Banno
- Applicant: Munehiro Tada , Toshitsugu Sakamoto , Hiromitsu Hada , Naoki Banno
- Applicant Address: JP Tokyo
- Assignee: NEC CORPORATION
- Current Assignee: NEC CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2009-004038 20090109
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L45/00 ; H01L27/24 ; H01L27/10

Abstract:
A semiconductor device comprises a semiconductor substrate; a multilevel wiring layer structure on the semiconductor substrate; and a variable resistance element in the multilevel wiring layer structure, wherein the variable resistance element comprises a variable resistance element film whose resistance changes between a top electrode and a bottom electrode, wherein the multilevel wiring layer structure comprises at least a wiring electrically connected to the bottom electrode and a plug electrically connected to the top electrode, and wherein the wiring also serves as the bottom electrode.
Public/Granted literature
- US20160284993A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-09-29
Information query
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