Invention Grant
- Patent Title: Methods for fabricating artificial neural networks (ANN) based on doped semiconductor elements
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Application No.: US15479876Application Date: 2017-04-05
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Publication No.: US10256405B2Publication Date: 2019-04-09
- Inventor: Ali Afzali-Ardakani , Matthew Warren Copel , James Bowler Hannon , Satoshi Oida
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: McGinn IP Law Group, PLLC
- Agent Vazken Alexanian
- Main IPC: H01L45/00
- IPC: H01L45/00 ; G06N3/04
Abstract:
A method of forming semiconductor elements in an artificial neural network, the method including forming a substrate including an oxide layer, forming a Silicon layer on the oxide layer, depositing a thin film dopant layer on the Silicon layer, and controlling a concentration of the dopant in the thin film dopant layer.
Public/Granted literature
- US20180294410A1 Methods for Fabricating Artificial Neural Networks (ANN) Based on Doped Semiconductor Elements Public/Granted day:2018-10-11
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