Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15568005Application Date: 2016-05-24
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Publication No.: US10256640B2Publication Date: 2019-04-09
- Inventor: Nobuyuki Kato
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2015-116936 20150609
- International Application: PCT/JP2016/002512 WO 20160524
- International Announcement: WO2016/199360 WO 20161215
- Main IPC: H02J5/00
- IPC: H02J5/00 ; H01L23/48 ; H01L25/07 ; H01L25/18 ; H02M7/537 ; H02M1/088 ; H02M7/00

Abstract:
A semiconductor device includes: a first switching element that controls an output current flowing between a power source and a load; a second switching element that is connected to the first switching element in parallel, and controls an output current flowing between the power source and the load; and a drive circuit that outputs control signals to the first switching element and the second switching element to individually control the first switching element and the second switching element. A second output current path that allows the output current to flow from a terminal connected to the power source to a terminal connected to the load via the second switching element is longer than a first output current path that allows the output current to flow from a terminal connected to the power source to a terminal connected to the load via the first switching element.
Public/Granted literature
- US20180145513A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-05-24
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