Invention Grant
- Patent Title: Aluminum apparatus with aluminum oxide layer and method for forming the same
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Application No.: US15182334Application Date: 2016-06-14
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Publication No.: US10262839B2Publication Date: 2019-04-16
- Inventor: Ru-Chien Chiu , Bing-Hung Chen , Keith Kuang-Kuo Koai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01J37/32
- IPC: H01J37/32 ; C25D11/04 ; C25D11/24

Abstract:
In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.
Public/Granted literature
- US20170358430A1 ALUMINUM APPARATUS WITH ALUMINUM OXIDE LAYER AND METHOD FOR FORMING THE SAME Public/Granted day:2017-12-14
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