Invention Grant
- Patent Title: Integrated circuit device
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Application No.: US15679444Application Date: 2017-08-17
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Publication No.: US10262937B2Publication Date: 2019-04-16
- Inventor: Joon-gon Lee , Ryuji Tomita , Do-Sun Lee , Chul-sung Kim , Do-hyun Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse P.C.
- Priority: KR10-2017-0030269 20170309
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L29/78 ; H01L23/532 ; H01L21/768

Abstract:
An integrated circuit device includes at least one fin-type active region, a gate line on the at least one fin-type active region, and a source/drain region on the at least one fin-type active region at at least one side of the gate line. A first conductive plug is connected to the source/drain region and includes cobalt. A second conductive plug is connected to the gate line and spaced apart from the first conductive plug. A third conductive plug is connected to each of the first conductive plug and the second conductive plug. The third conductive plug electrically connects the first conductive plug and the second conductive plug.
Public/Granted literature
- US20180261540A1 INTEGRATED CIRCUIT DEVICE Public/Granted day:2018-09-13
Information query
IPC分类: