- Patent Title: Protection device and method for fabricating the protection device
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Application No.: US15621772Application Date: 2017-06-13
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Publication No.: US10262986B2Publication Date: 2019-04-16
- Inventor: Sheng-Huei Dai , Tzung-Lin Li
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/02 ; H01L29/94
Abstract:
A protection device as provided includes a doped well with a first-type impurity, formed in a substrate. A first semiconductor terminal with a second-type impurity is formed on the doped well. A second semiconductor terminal with a second-type impurity is formed on the doped well separating from the first semiconductor terminal. The first semiconductor terminal is connected to a voltage level and a second semiconductor terminal is connected to a ground voltage.
Public/Granted literature
- US20180358351A1 PROTECTION DEVICE AND METHOD FOR FABRICATING THE PROTECTION DEVICE Public/Granted day:2018-12-13
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