- 专利标题: Semiconductor device
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申请号: US15443079申请日: 2017-02-27
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公开(公告)号: US10263015B2公开(公告)日: 2019-04-16
- 发明人: Toshinari Sasaki
- 申请人: Japan Display Inc.
- 申请人地址: JP Tokyo
- 专利权人: Japan Display Inc.
- 当前专利权人: Japan Display Inc.
- 当前专利权人地址: JP Tokyo
- 代理机构: Typha IP LLC
- 优先权: JP2016-054739 20160318; JP2016-054742 20160318; JP2016-054746 20160318; JP2016-054749 20160318
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L27/12 ; H01L21/475 ; H01L29/423 ; H01L29/66
摘要:
A semiconductor device includes a first electrode, a first insulating layer on the first electrode, a second electrode on the first insulating layer, a second insulating layer on the second electrode, a first opening in the first insulating layer, the second electrode and the second insulating layer, the first opening reaching the first electrode, a first oxide semiconductor layer in the first opening, the first oxide semiconductor layer being connected with the first electrode and the second electrode, a first gate electrode facing the first oxide semiconductor layer, and a first gate insulating layer between the first oxide semiconductor layer and the first gate electrode.
公开/授权文献
- US20170271375A1 SEMICONDUCTOR DEVICE 公开/授权日:2017-09-21