Invention Grant
- Patent Title: Transistor with fluorinated graphene spacer
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Application No.: US15672017Application Date: 2017-08-08
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Publication No.: US10263080B2Publication Date: 2019-04-16
- Inventor: Ye Lu , Junjing Bao , Bin Yang , Lixin Ge , Yun Yue
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated/Seyfarth Shaw LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/16 ; H01L21/02 ; H01L29/10 ; H01L29/72 ; H01L29/78
Abstract:
An integrated circuit (IC) device may include a semiconductor structure. The semiconductor structure may include a source contact, a drain contact, and a gate. A first fluorocarbon spacer may be between the gate and the source contact. A second fluorocarbon spacer may be between the gate and the drain contact.
Public/Granted literature
- US20180342585A1 TRANSISTOR WITH FLUORINATED GRAPHENE SPACER Public/Granted day:2018-11-29
Information query
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