The present disclosure generally relates to semiconductor structures and, more particularly, to light emitting diodes and methods of manufacture. The method includes: forming fin structures with a doped core region, on a substrate material; forming a first color emitting region by cladding the doped core region of a first fin structure of the fin structures, while protecting the doped core regions of a second fin structure and a third fin structure of the fin structures; forming a second color emitting region by cladding the doped core region of the second fin structure, while protecting the doped core regions of the first fin structure and the third fin structure; and forming a third color emitting region by cladding the doped core region of the third fin structure, while protecting the doped core regions of the first fin structure and the second fin structure.