Invention Grant
- Patent Title: Method for manufacturing light-emitting device
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Application No.: US15922288Application Date: 2018-03-15
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Publication No.: US10263221B2Publication Date: 2019-04-16
- Inventor: Akihiro Chida , Kaoru Hatano , Tomoya Aoyama , Ryu Komatsu , Masatoshi Kataniwa
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2012-105553 20120504; JP2013-053332 20130315
- Main IPC: H01L51/56
- IPC: H01L51/56 ; H01L51/52 ; H01L27/32 ; H01L27/12

Abstract:
A method for exposing an electrode terminal covered with an organic film in a light-emitting device without damaging the electrode terminal is provided. In a region of the electrode terminal to which electric power from an external power supply or an external signal is input, an island-shaped organic compound-containing layer is formed and the organic film is formed thereover. The organic film is removed by utilizing low adhesion of an interface between the organic compound-containing layer and the electrode terminal, whereby the electrode terminal can be exposed without damage to the electrode terminal.
Public/Granted literature
- US10510992B2 Method for manufacturing light-emitting device Public/Granted day:2019-12-17
Information query
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