A method of manufacturing a semiconductor device is provided. A first substrate is bonded with a second substrate. The second substrate is recessed to form a first sidewall and a first cavity laterally defined by the first sidewall. The second substrate is recessed to form a second sidewall and a second cavity laterally defined by the second sidewall. The second substrate is bonded with a third substrate at a first barometric pressure thereby forming the first cavity and the second cavity. The first sidewall is recessed to form a channel from the first cavity to an outer surface of the first sidewall. The third substrate is recessed and the first cavity is exposed to a second barometric pressure different from the first barometric pressure.