Invention Grant
- Patent Title: Semiconductor device with non-linear surface
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Application No.: US15072598Application Date: 2016-03-17
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Publication No.: US10269575B2Publication Date: 2019-04-23
- Inventor: Xiaomeng Chen , Chien-Hong Chen , Shih-Chang Liu , Zhiqiang Wu
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsin-chu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsin-chu
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/306 ; H01L29/78 ; H01L29/94 ; H01L21/8246 ; H01L21/00 ; H01L21/8234 ; H01L21/8242 ; H01L21/20 ; H01L29/04 ; H01L21/308 ; H01L29/161 ; H01L21/762 ; H01L29/06
Abstract:
A semiconductor device includes a channel having a first linear surface and a first non-linear surface. The first non-linear surface defines a first external angle of about 80 degrees to about 100 degrees and a second external angle of about 80 degrees to about 100 degrees. The semiconductor device includes a dielectric region covering the channel between a source region and a drain region. The semiconductor device includes a gate electrode covering the dielectric region between the source region and the drain region.
Public/Granted literature
- US20160196983A1 SEMICONDUCTOR DEVICE WITH NON-LINEAR SURFACE Public/Granted day:2016-07-07
Information query
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