- 专利标题： Method of fabricating a semiconductor structure
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申请号： US15722405申请日： 2017-10-02
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公开(公告)号： US10269581B2公开(公告)日： 2019-04-23
- 发明人: Tzu-Yen Hsieh , Ming-Ching Chang , Chia-Wei Chang , Chao-Cheng Chen , Chun-Hung Lee , Dai-Lin Wu
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/3215
- IPC分类号： H01L21/3215 ; H01L21/3213 ; H01L21/266 ; H01L21/033 ; H01L21/28 ; H01L21/265
摘要：
A method of making a semiconductor structure, the method including forming a conductive layer over a substrate. The method further includes forming a first imaging layer over the conductive layer, where the first imaging layer comprises a plurality of layers. The method further includes forming openings in the first imaging layer to expose a first set of areas of the conductive layer. The method further includes implanting ions into each area of the first set of area. The method further includes forming a second imaging layer over the conductive layer. The method further includes forming openings in the second imaging layer to expose a second set of areas of the conductive layer, wherein the second set of areas is different from the first set of areas. The method further includes implanting ions into the each area of the second set of areas.
公开/授权文献
- US20180047585A1 METHOD OF FABRICATING A SEMICONDUCTOR STRUCTURE 公开/授权日：2018-02-15
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