Invention Grant
- Patent Title: Metal gate structure
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Application No.: US15943790Application Date: 2018-04-03
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Publication No.: US10269912B2Publication Date: 2019-04-23
- Inventor: Peng-Soon Lim , Da-Yuan Lee , Kuang-Yuan Hsu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L29/423 ; H01L21/8234 ; H01L21/28 ; H01L29/49 ; H01L21/285 ; H01L21/311

Abstract:
A device comprises a metal gate structure over a substrate, wherein the metal gate structure comprises a first metal sidewall, a metal bottom layer, a first corner portion between the first metal sidewall and the metal bottom layer, wherein the first corner portion comprises a first step and a first ramp, a second metal sidewall and a second corner portion between the second metal sidewall and the metal bottom layer, wherein the second corner portion comprises a second step and a second ramp.
Public/Granted literature
- US20180226482A1 Metal Gate Structure Public/Granted day:2018-08-09
Information query
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