- 专利标题： Semiconductor device and method for manufacturing the same
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申请号： US15335492申请日： 2016-10-27
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公开(公告)号： US10269962B2公开(公告)日： 2019-04-23
- 发明人: Seung Ryul Lee , Sang Moon Lee , Chul Kim , Ji Eon Yoon
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine, Whitt & Francos, PLLC
- 优先权： KR10-2016-0001537 20160106
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/423
摘要：
A semiconductor device has a fin-type structure which extends in a first direction and includes a laminate of oxide and semiconductor patterns disposed one on another on a first region of a substrate, and a first gate electrode that extends longitudinally in a second direction different from the first direction on the fin-type structure. Each oxide pattern is an oxidized compound containing a first element.
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