发明授权
- 专利标题： Integrated light emitting device, integrated sensor device, and manufacturing method
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申请号： US15196203申请日： 2016-06-29
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公开(公告)号： US10270002B2公开(公告)日： 2019-04-23
- 发明人: Thoralf Kautzsch
- 申请人： Infineon Technologies Dresden GmbH
- 申请人地址： DE Dresden
- 专利权人： Infineon Technologies Dresden GmbH
- 当前专利权人： Infineon Technologies Dresden GmbH
- 当前专利权人地址： DE Dresden
- 代理机构： Volpe and Koenig, P.C.
- 优先权： DE102015110496 20150630
- 主分类号： H01L31/173
- IPC分类号： H01L31/173 ; G01N21/552 ; H01L33/00 ; H01L33/20 ; G02B6/12
摘要：
The present disclosure relates to an integrated light emitting device. The integrated light emitting device comprises a substrate of semiconductor material, a light emitting unit integrated into the semiconductor material, and at least one cavity formed into the semiconductor material between the substrate and the light emitting unit. At least portions of the at least one cavity may be formed by Silicon-On-Nothing (SON) process steps.
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