Invention Grant
- Patent Title: Overvoltage protection and short-circuit withstanding for gallium nitride devices
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Application No.: US15182696Application Date: 2016-06-15
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Publication No.: US10270239B2Publication Date: 2019-04-23
- Inventor: Sandeep R. Bahl
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Tuenlap Chan; Charles A. Brill; Frank D. Cimino
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H02H7/12 ; H02H1/00 ; H02M1/08 ; H02M1/32 ; H03K17/082

Abstract:
Disclosed examples include methods, integrated circuits and switch circuits including a driver circuit and a silicon transistor or other current source circuit coupled with a gallium nitride or other high electron mobility first transistor, where the driver operatives in a first mode to deliver a control voltage signal to the first transistor, and in a second mode in response to a detected overvoltage condition associated with the first transistor to control the current source circuit to conduct a sink current from the first transistor to affect a control voltage to at least partially turn on the first transistor.
Public/Granted literature
- US20170365995A1 OVERVOLTAGE PROTECTION AND SHORT-CIRCUIT WITHSTANDING FOR GALLIUM NITRIDE DEVICES Public/Granted day:2017-12-21
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