Invention Grant
- Patent Title: Methods and apparatus for a hybrid capacitively-coupled and an inductively-coupled plasma processing system
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Application No.: US15014901Application Date: 2016-02-03
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Publication No.: US10276348B2Publication Date: 2019-04-30
- Inventor: Alexei Marakhtanov , Eric A Hudson , Rajinder Dhindsa , Neil Benjamin
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: H01J37/32
- IPC: H01J37/32
Abstract:
A capacitively-coupled plasma (CCP) processing system having a plasma processing chamber for processing a substrate is provided. The capacitively-coupled Plasma (CCP) processing system includes an upper electrode and a lower electrode for processing the substrate, which is disposed on the lower electrode during plasma processing. The capacitively-coupled Plasma (CCP) processing system also includes an array of inductor coils arrangement configured to inductively sustain plasma in a gap between the upper electrode and the lower electrode.
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