- 专利标题： Semiconductor device and method for fabricating the same
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申请号： US15987887申请日： 2018-05-23
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公开(公告)号： US10276389B1公开(公告)日： 2019-04-30
- 发明人: Chih-Chieh Tsai , Yi-Wei Chen , Pin-Hong Chen , Chih-Chien Liu , Tzu-Chieh Chen , Chun-Chieh Chiu , Tsun-Min Cheng , Kai-Jiun Chang , Chia-Chen Wu , Yi-An Huang
- 申请人： UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- 申请人地址： TW Hsin-Chu CN Quanzhou, Fujian Province
- 专利权人： UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- 当前专利权人： UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu CN Quanzhou, Fujian Province
- 代理商 Winston Hsu
- 优先权： CN201810341859 20180417
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/336 ; H01L29/78 ; H01L29/76 ; H01L21/28 ; H01L21/768 ; H01L29/49 ; H01L27/108
摘要：
A method for fabricating semiconductor device includes the steps of: forming a silicon layer on a substrate; forming a first metal silicon nitride layer on the silicon layer; performing an oxygen treatment process to form an oxide layer on the first metal silicon nitride layer; forming a second metal silicon nitride layer on the oxide layer; forming a conductive layer on the second metal silicon nitride layer; and patterning the conductive layer, the second metal silicon nitride layer, the oxide layer, the first metal silicon nitride layer, and the silicon layer to form a gate structure.
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