发明授权
- 专利标题： Semiconductor device with multiple threshold voltage and method of fabricating the same
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申请号： US14148825申请日： 2014-01-07
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公开(公告)号： US10276562B2公开(公告)日： 2019-04-30
- 发明人: Li-Ting Wang , Teng-Chun Tsai , Cheng-Tung Lin , De-Fang Chen , Hui-Cheng Chang
- 申请人： Taiwan Semiconductor Manufacturing Company Limited
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McDermott Will & Emery LLP
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L29/78 ; H01L21/8234 ; H01L21/265 ; H01L29/423 ; H01L29/66
摘要：
According to an exemplary embodiment, a chip is provided. The chip includes a first vertical device having a first threshold and second vertical device having a second threshold. The first vertical device includes a first source; a first channel over the first source; a first drain over the first channel; a first conductive layer adjacent to the first channel; and a first gate adjacent to the first conductive layer. The second vertical device includes a second source; a second channel over the second source; a second drain over the second channel; a second conductive layer adjacent to the second channel; and a second gate adjacent to the second conductive layer.
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