- 专利标题： Semiconductor device and method of manufacturing the same
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申请号： US15841724申请日： 2017-12-14
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公开(公告)号： US10276711B2公开(公告)日： 2019-04-30
- 发明人: Yuji Ebiike , Naoki Yutani
- 申请人： Mitsubishi Electric Corporation
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Studebaker & Brackett PC
- 优先权： JP2017-084243 20170421
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/739 ; H01L21/66 ; H01L29/06 ; H01L29/16 ; H01L29/66
摘要：
Provided is a semiconductor device including an active region provided in a first conductivity type semiconductor layer and a termination region provided around the active region. A MOS transistor through which a main current flows in a thickness direction of the semiconductor layer is formed in the active region. The termination region includes a defect detection device provided along the active region. The defect detection device includes a diode including a first main electrode provided along the active region on a first main surface of the semiconductor layer, and a second main electrode provided on a second main surface side of the semiconductor layer.
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