Invention Grant
- Patent Title: Silicon carbide semiconductor device and method of manufacturing the silicon carbide semiconductor device
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Application No.: US15846075Application Date: 2017-12-18
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Publication No.: US10283591B2Publication Date: 2019-05-07
- Inventor: Naoyuki Ohse , Yusuke Kobayashi , Takahito Kojima , Shinsuke Harada
- Applicant: FUJI ELECTRIC CO., LTD. , NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Applicant Address: JP Kawasaki-Shi, Kanagawa JP Tokyo
- Assignee: FUJI ELECTRIC CO., LTD.,NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Current Assignee: FUJI ELECTRIC CO., LTD.,NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa JP Tokyo
- Agency: Rabin & Berdo, P.C.
- Priority: JP2016-247222 20161220
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/10 ; H01L29/66 ; H01L29/16 ; H01L29/78 ; H01L29/739
Abstract:
A vertical MOSFET of a trench gate structure includes an n−-type drift layer and a p+-type base layer formed by epitaxial growth. The vertical MOSFET includes a trench that penetrates the n−-type drift layer and the p+-type base layer. A low-concentration thin film is provided in the trench. The low-concentration thin film is in contact with the p+-type base layer and is of the same conductivity type as the p+-type base layer. Further, the low-concentration thin film has an impurity concentration that is lower than that of the p+-type base layer.
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