Invention Grant
- Patent Title: Strained silicon germanium fin with block source/drain epitaxy and improved overlay capacitance
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Application No.: US15467801Application Date: 2017-03-23
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Publication No.: US10283601B2Publication Date: 2019-05-07
- Inventor: Karthik Balakrishnan , Kangguo Cheng , Pouya Hashemi , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent L. Jeffrey Kelly, Esq.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/417 ; H01L29/78 ; H01L21/02 ; H01L21/283 ; H01L29/165 ; H01L29/423
Abstract:
A semiconductor structure is provided including a strained silicon germanium alloy fin that can be employed as a channel material for a FinFET device and having a gate spacer including a lower portion that fills in a undercut region that lies adjacent to the strained silicon germanium alloy fin and beneath raised source/drain (S/D) structures and silicon pedestal structures that can provide improved overlay capacitance.
Public/Granted literature
- US20170221993A1 STRAINED SILICON GERMANIUM FIN WITH BLOCK SOURCE/DRAIN EPITAXY AND IMPROVED OVERLAY CAPACITANCE Public/Granted day:2017-08-03
Information query
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