Invention Grant
- Patent Title: Source/drain contacts for non-planar transistors
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Application No.: US15656290Application Date: 2017-07-21
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Publication No.: US10283640B2Publication Date: 2019-05-07
- Inventor: Sameer S. Pradhan , Subhash M. Joshi , Jin-Sung Chun
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard & Mughal LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/02 ; H01L23/48 ; H01L29/66 ; H01L29/417 ; H01L21/283 ; H01L21/3205 ; H01L29/16 ; H01L29/45 ; H01L21/768 ; H01L21/285
Abstract:
The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of source/drain contacts within non-planar transistors, wherein a titanium-containing contact interface may be used in the formation of the source/drain contact with a discreet titanium silicide formed between the titanium-containing interface and a silicon-containing source/drain structure.
Public/Granted literature
- US20170323966A1 SOURCE/DRAIN CONTACTS FOR NON-PLANAR TRANSISTORS Public/Granted day:2017-11-09
Information query
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