Invention Grant
- Patent Title: Nano-structure and method of making the same
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Application No.: US15438074Application Date: 2017-02-21
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Publication No.: US10287697B2Publication Date: 2019-05-14
- Inventor: Peter Mardilovich , Qingqiao Wei , Irina Nikolaevna Milonova , Anthony M. Fuller
- Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Applicant Address: US TX Spring
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Spring
- Agency: Dierker & Kavanaugh PC
- Main IPC: C25D11/12
- IPC: C25D11/12 ; C25D1/00 ; B81C1/00 ; C25D11/24 ; C25D11/26 ; C25D11/04 ; C25D11/10

Abstract:
In an example of a method for making a nano-structure, an aluminum layer is partially anodized to form a porous anodic alumina structure. The aluminum layer is positioned on an oxidizable material layer. The porous anodic alumina structure is exposed to partial anisotropic etching to form tracks within the porous anodic alumina structure. A remaining portion of the aluminum layer is further anodized to form paths where the tracks are formed. The oxidizable material layer is anodized to from an oxide, where the oxide grows through the paths formed within the porous anodic alumina structure to form a set of super nano-pillars.
Public/Granted literature
- US20170159194A1 NANO-STRUCTURE AND METHOD OF MAKING THE SAME Public/Granted day:2017-06-08
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