Invention Grant
- Patent Title: Integrated ion sensing apparatus and methods
-
Application No.: US14993871Application Date: 2016-01-12
-
Publication No.: US10288582B2Publication Date: 2019-05-14
- Inventor: Helen Berney , William Allan Lane , Patrick Martin McGuinness , Thomas G. O'Dwyer
- Applicant: Analog Devices Global
- Applicant Address: BM Hamilton
- Assignee: Analog Devices Global
- Current Assignee: Analog Devices Global
- Current Assignee Address: BM Hamilton
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G01N27/414
- IPC: G01N27/414

Abstract:
An integrated ion-sensitive probe is provided. In an example, an ion-sensitive probe can include a semiconductor substrate and a first passive electrode attached to the semiconductor substrate. The first passive electrode can be configured to contact a solution and to provide a first electrical voltage as function of a concentration of an ion within the solution. In certain examples, a passive reference electrode can be co-located on the semiconductor substrate. In some examples, processing electronics can be integrated on the semiconductor substrate.
Public/Granted literature
- US20170199148A1 INTEGRATED ION SENSING APPARATUS AND METHODS Public/Granted day:2017-07-13
Information query