Invention Grant
- Patent Title: Nonvolatile memory devices and methods of controlling the same
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Application No.: US15671855Application Date: 2017-08-08
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Publication No.: US10289561B2Publication Date: 2019-05-14
- Inventor: Elona Erez , Avner Dor , Jun-Jin Kong
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: P. Chau & Associates, LLC
- Main IPC: G06F12/10
- IPC: G06F12/10 ; G06F12/1009 ; G06F3/06

Abstract:
A method of controlling a nonvolatile memory device includes: receiving a plurality of logical pages associated with a plurality of physical addresses, respectively; storing the plurality of logical pages at the plurality of physical addresses in a selected one of a plurality of sub-clusters according to a given order of logical addresses of the logical pages; generating a first table including an entry for each one of the ordered logical addresses identifying a cluster of the selected sub-cluster and an offset into the selected sub-cluster; and generating a second table including an entry for the selected sub-cluster and the cluster indicating one of the ordered logical addresses associated with a first physical page of the selected sub-cluster.
Public/Granted literature
- US20190050343A1 NONVOLATILE MEMORY DEVICES AND METHODS OF CONTROLLING THE SAME Public/Granted day:2019-02-14
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