A multi-Vt FinFET includes a semiconductor substrate, multiple first fins coupled to the semiconductor substrate having a first fin pitch, and multiple second fins coupled to the semiconductor substrate having a second fin pitch larger than the first fin pitch. The semiconductor structure further includes transistor(s) on the multiple first fins, and transistor(s) on the multiple second fins, a threshold voltage of the transistor(s) on the multiple second fins being higher than that of the transistor(s) on the multiple first fins.