Methods for improving the operation of a memory array by arranging a Metal-Insulator-Metal (MIM) structure between a word line and an adjustable resistance bit line structure are described. The MIM structure may correspond with a metal/ReRAM material/metal structure that is arranged between the word line and an intrinsic polysilicon region of the adjustable resistance bit line structure. In one example, a word line (e.g., TiN) may be arranged adjacent to a ReRAM material (e.g., HfOx) that is adjacent to a first metal (e.g., TiN) that is adjacent to the intrinsic polysilicon region. The first metal may comprise a metal, metal-nitride, or a metal-silicide. In another example, the word line may be arranged adjacent to a ReRAM material that is adjacent to a first metal (e.g., TiN) that is adjacent to a second metal different from the first metal (e.g., tungsten) that is adjacent to the intrinsic polysilicon region.