An illustrative method includes, among other things, forming a plurality of fins. A subset of the plurality of fins is selectively removed, leaving at least a first fin to define a first fin portion and at least a second fin to define a second fin portion. A first type of dopant is implanted into a substrate to define a resistor body and the first type of dopant is implanted into the first and second fins. The first fin portion is disposed above a first end of the resistor body and the second fin is disposed above a second end of the resistor body. An insulating layer is formed above the resistor body. At least one gate structure is formed above the insulating layer and above the resistor body.