Invention Grant
- Patent Title: Radiation detector comprising amorphous selenium
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Application No.: US14715614Application Date: 2015-05-19
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Publication No.: US10290751B2Publication Date: 2019-05-14
- Inventor: Seiji Yamashita , Toshihiro Ise
- Applicant: FUJIFILM CORPORATION
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM CORPORATION
- Current Assignee: FUJIFILM CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Solaris Intellectual Property Group, PLLC
- Priority: JP2012-269699 20121210
- Main IPC: H01L31/08
- IPC: H01L31/08 ; H01L31/09 ; H01L31/20 ; H01L51/00 ; H01L51/42 ; H01L27/146 ; H01L31/115 ; H01L31/117 ; H01L31/0256 ; H01L31/0272

Abstract:
A radiation detector (10) which has a multilayer structure that includes: a first electrode (34); a second electrode (49) that is disposed so as to face the first electrode; a selenium layer (48) that is disposed between the first electrode and the second electrode and contains amorphous selenium; a first blocking organic layer (38) that is adjacent to the selenium layer, between the first electrode and the selenium layer, and that contains a hole transport material having an electron affinity of 3.7 eV or less; and a second blocking organic layer (37) that is adjacent to the selenium layer, between the second electrode and the selenium layer, and that contains an electron transport material having an ionization potential of 5.9 eV or more. This radiation detector (10) has low dark current, excellent durability, and less afterimages.
Public/Granted literature
- US20150255636A1 RADIATION DETECTOR Public/Granted day:2015-09-10
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