- 专利标题： Primary distillation boron reduction
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申请号： US15872309申请日： 2018-01-16
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公开(公告)号： US10294109B2公开(公告)日： 2019-05-21
- 发明人: April Ashworth , Michael W. Keevan
- 申请人： Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) , MITSUBISHI MATERIALS CORPORATION
- 申请人地址： US AL Theodore JP Tokyo
- 专利权人： MITSUBISHI POLYCRYSTALLINE SILICON AMERICA CORPORATION (MIPSA),MITSUBISHI MATERIALS CORPORATION
- 当前专利权人： MITSUBISHI POLYCRYSTALLINE SILICON AMERICA CORPORATION (MIPSA),MITSUBISHI MATERIALS CORPORATION
- 当前专利权人地址： US AL Theodore JP Tokyo
- 代理机构： Locke Lord LLP
- 主分类号： C01B33/039
- IPC分类号： C01B33/039 ; C01B33/021 ; C01B33/035 ; C01B33/107
摘要：
The present invention relates to an apparatus and a method for producing polycrystalline silicon having a reduced amount of boron compound impurities. Especially, the boron compounds are removed from the process for producing polycrystalline silicon, while the trichlorosilane is purified by distillation. The invention feeds condensed liquid trichlorosilane into a primary distillation tower below the liquid level inside the primary distillation tower thereby scrubbing the boron impurities upon contact inside the primary distillation tower. There result is trichlorosilane leaving the primary distillation tower with total amount of boron at least 10 times less.
公开/授权文献
- US20180141819A1 PRIMARY DISTILLATION BORON REDUCTION 公开/授权日：2018-05-24
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