Invention Grant
- Patent Title: Pattern measurement method and measurement apparatus
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Application No.: US15215756Application Date: 2016-07-21
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Publication No.: US10295339B2Publication Date: 2019-05-21
- Inventor: Kazuhisa Hasumi , Masami Ikota
- Applicant: Hitachi High-Technologies Corporation
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Crowell & Moring LLP
- Priority: JP2015-151450 20150731
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G01B15/06 ; G01B15/04 ; H01J37/26 ; H01L21/66

Abstract:
A pattern measurement method and measurement apparatus are provided that appropriately evaluate the deformation of a pattern occurring due to a micro loading effect. In order to achieve the above-mentioned object, there are provided pattern measurement method and apparatus that measure a dimension of a pattern formed on a sample. In the pattern measurement method and apparatus, distances between a reference pattern and a plurality of adjacent patterns adjacent to the reference pattern or inner diameters of the reference pattern in a plurality of directions are measured, and the measurement results of the plurality of distances between the reference pattern and the adjacent patterns or the measurement results of the inner diameters of the reference pattern in the plurality of directions are classified according to distances between the reference pattern and the adjacent patterns or directions of the patterns adjacent to the reference pattern.
Public/Granted literature
- US20170030712A1 Pattern Measurement Method and Measurement Apparatus Public/Granted day:2017-02-02
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