Invention Grant
- Patent Title: Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method
-
Application No.: US15980783Application Date: 2018-05-16
-
Publication No.: US10295900B2Publication Date: 2019-05-21
- Inventor: Toshihiko Orihara , Kazuhiro Hamamoto , Hirofumi Kozakai , Youichi Usui , Tsutomu Shoki , Junichi Horikawa
- Applicant: HOYA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HOYA CORPORATION
- Current Assignee: HOYA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-074626 20120328
- Main IPC: G03F1/22
- IPC: G03F1/22 ; G03F1/48 ; C03C3/06 ; G02B5/08 ; G03F7/16 ; G03F7/20 ; B82Y10/00 ; B82Y40/00 ; C03C17/34 ; C03C17/36 ; C03C23/00 ; H01L21/308
Abstract:
Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1.
Public/Granted literature
Information query
