A resistive memory cell includes a barrier layer containing at least one of silicon and germanium, and a metal oxide layer including an oxide of a metal element that provides a reversible chemical reaction under a bidirectional electrical bias at an interface with the barrier material layer. The reversible chemical reaction is selected from a silicidation reaction between the barrier material layer and the metal element, a germanidation reaction between the barrier material layer and the metal element, oxidation of the metal element, and reduction of the metal element.