Interconnect structures for a security application and methods of forming an interconnect structure for a security application. A sacrificial masking layer is formed that includes a plurality of particles arranged with a random distribution. An etch mask is formed using the sacrificial masking layer. A hardmask is etched while masked by the etch mask to define a plurality of mask features arranged with the random distribution. A dielectric layer is etched while masked by the hardmask to form a plurality of openings in the dielectric layer that are arranged at the locations of the mask features. The openings in the dielectric layer are filled with a conductor to define a plurality of conductive features.