Invention Grant
- Patent Title: Method for fabricating complementary metal-oxide-semiconductor image sensor
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Application No.: US15718318Application Date: 2017-09-28
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Publication No.: US10297636B2Publication Date: 2019-05-21
- Inventor: Bo-Tsung Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/146 ; H01L21/266 ; H01L21/265
Abstract:
A method of fabricating an image sensor includes implanting a first dopant in a substrate, removing a portion of the substrate to define a protrusion, forming a conductive feature over the protrusion, and implanting a second dopant in the protrusion. The removal of the portion of the substrate defines a first surface surrounding the protrusion. The second dopant has a same conductivity type as the first dopant.
Public/Granted literature
- US20190096952A1 METHOD FOR FABRICATING COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR IMAGE SENSOR Public/Granted day:2019-03-28
Information query
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