Invention Grant
- Patent Title: Semiconductor device having data storage pattern
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Application No.: US15671735Application Date: 2017-08-08
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Publication No.: US10297642B2Publication Date: 2019-05-21
- Inventor: Masayuki Terai
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2017-0039012 20170328
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24

Abstract:
A semiconductor device including a data storage pattern is provided. The semiconductor device includes a first conductive line disposed on a substrate and extending in a first direction, a second conductive line disposed on the first conductive line and extending in a second direction, and a first data storage structure and a first selector structure disposed between the first conductive line and the second conductive line and connected in series. The first data storage structure includes a first lower data storage electrode, a first data storage pattern, and a first upper data storage electrode. The first lower data storage electrode includes a first portion facing the first upper data storage electrode and vertically aligned with the first upper data storage electrode. The first data storage pattern includes a first side surface and a second side surface facing each other. The first upper data storage electrode and the first portion of the first lower data storage electrode are disposed to be closer to the first side surface of the first data storage pattern than to the second side surface of the first data storage pattern.
Public/Granted literature
- US20180286919A1 Semiconductor Device Having Data Storage Pattern Public/Granted day:2018-10-04
Information query
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