- 专利标题： Method of quasi-atomic layer etching of silicon nitride
-
申请号： US15910508申请日： 2018-03-02
-
公开(公告)号： US10304688B2公开(公告)日： 2019-05-28
- 发明人: Sonam D. Sherpa , Alok Ranjan
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 代理机构： Rothwell, Figg, Ernst & Manbeck, P.C.
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; C23C16/02 ; C01B21/068 ; H01L21/311 ; H01L21/033
摘要：
A method of etching is described. The method includes providing a substrate having a first material containing silicon nitride and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing N and F, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material.
公开/授权文献
- US20180261462A1 METHOD OF QUASI-ATOMIC LAYER ETCHING OF SILICON NITRIDE 公开/授权日：2018-09-13
信息查询
IPC分类:
