Invention Grant
- Patent Title: Semiconductor devices and method of fabricating the same
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Application No.: US15939914Application Date: 2018-03-29
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Publication No.: US10304834B2Publication Date: 2019-05-28
- Inventor: Sangmoon Lee , Jungtaek Kim , Yihwan Kim , Woo Bin Song , Dongsuk Shin , Seung Ryul Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2017-0110353 20170830
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/092 ; H01L21/84 ; H01L29/66 ; H01L21/8238 ; H01L27/088 ; H01L27/12
Abstract:
A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate; an active pattern spaced apart from the substrate and extending in a first direction; and a gate structure on the active pattern and extending in a second direction crossing the first direction, wherein a lower portion of the active pattern extends in the first direction and includes a first lower surface that is sloped with respect to an upper surface of the substrate.
Public/Granted literature
- US20190067285A1 SEMICONDUCTOR DEVICES AND METHOD OF FABRICATING THE SAME Public/Granted day:2019-02-28
Information query
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