- 专利标题: Polysilicon thin film transistor and manufacturing method thereof, array substrate, display panel
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申请号: US15083646申请日: 2016-03-29
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公开(公告)号: US10304963B2公开(公告)日: 2019-05-28
- 发明人: Xiaoyong Lu , Dong Li , Zheng Liu , Shuai Zhang , Liang Sun , Chunping Long
- 申请人: BOE TECHNOLOGY GROUP CO., LTD.
- 申请人地址: CN Beijing
- 专利权人: BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人: BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人地址: CN Beijing
- 代理机构: Womble Bond Dickinson (US) LLP
- 优先权: CN201510166484 20150409
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L29/66 ; H01L21/265
摘要:
The embodiments of the present disclosure provide a polysilicon thin film transistor and manufacturing method thereof, an array substrate, and a display panel. The method for manufacturing a polysilicon thin film transistor comprises: forming, on a substrate, a gate, a source and a drain, and an active layer. Forming the active layer comprises: forming a polysilicon layer on the substrate, which comprises a channel region and extension regions; performing ion injection process in the extension regions to form lightly-doped regions close to the channel region and a source region and a drain region; prior to or following the formation of the lightly-doped regions, employing halo ion injection process to form halo regions at the positions of the channel region which are close to the lightly-doped regions.
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