- 专利标题: SRAM read multiplexer including replica transistors
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申请号: US16025647申请日: 2018-07-02
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公开(公告)号: US10311944B2公开(公告)日: 2019-06-04
- 发明人: Dhori Kedar Janardan , Abhishek Pathak , Shishir Kumar
- 申请人: STMicroelectronics International N.V.
- 申请人地址: NL Schiphol
- 专利权人: STMicroelectronics International N.V.
- 当前专利权人: STMicroelectronics International N.V.
- 当前专利权人地址: NL Schiphol
- 代理机构: Crowe & Dunlevy
- 主分类号: G11C5/06
- IPC分类号: G11C5/06 ; G11C11/417
摘要:
A first transistor has a first conduction terminal coupled to a second bit line, a second conduction terminal coupled to a bit line node, and a control terminal biased by a second control signal. A second transistor has a first conduction terminal coupled to a second complementary bit line, a second conduction terminal coupled to a complementary bit line node, and a control terminal biased by the second control signal. A first replica transistor has a first conduction terminal coupled to the second bit line, a second conduction terminal coupled to the complementary bit line node, and a control terminal biased such that the first replica transistor is off. A second replica transistor has a first conduction terminal coupled to the second complementary bit line, a second conduction terminal coupled to the bit line node, and a control terminal biased such that the second replica transistor is off.
公开/授权文献
- US20190035454A1 SRAM READ MULTIPLEXER INCLUDING REPLICA TRANSISTORS 公开/授权日:2019-01-31
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